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Determination of the Strain Status of GaAs/AlAs Quantum Wires and Quantum Dots

Published online by Cambridge University Press:  28 February 2011

A.A. Darhuber
Affiliation:
Institut für Halbleiterphysik, Johannes Kepler Universitat Linz, Altenbergerstraβe 69, A-4040 Linz, Austria
G. Bauer
Affiliation:
Institut für Halbleiterphysik, Johannes Kepler Universitat Linz, Altenbergerstraβe 69, A-4040 Linz, Austria
P.D. Wang
Affiliation:
Nanoelectronics Research Center, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8LT, U.K.
Y.P. Song
Affiliation:
Nanoelectronics Research Center, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8LT, U.K.
C.M. Sotomayor Torres
Affiliation:
Nanoelectronics Research Center, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8LT, U.K.
M.C. Holland
Affiliation:
Nanoelectronics Research Center, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8LT, U.K.
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Abstract

We have investigated periodic arrays of 150 and 175 nm wide GaAs-AlAs quantum wires and quantum dots, fabricated by electron beam lithography and SiCI4/O2 reactive ion etching, by means of reciprocal space mapping using triple axis x-ray diffractometry (TAD). The reciprocal space maps reveal that after the fabrication process the lattice constant along the growth direction slightly increases for the wires and even more so for the dots.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

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