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Determination of the Dislocation Network Density in GaAs Using Thermal Wave Microscopy

Published online by Cambridge University Press:  25 February 2011

Anita G. Brandes ,
Chwan Tang  and
Charles Fillmore
Anita G. Brandes
Affiliation:
Gould Inc., 40 Gould Center, Rolling Meadows, IL 60008
Chwan Tang
Affiliation:
Gould Inc., 40 Gould Center, Rolling Meadows, IL 60008
Charles Fillmore
Affiliation:
Gould Inc., 40 Gould Center, Rolling Meadows, IL 60008
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Abstract

The pattern and density of dislocations in GaAs is thought to affect the ultimate performance of finished devices. Previous studies of dislocation networks have usually involved molten KOK etching of GaAs wafers or X-ray topography. A relatively new technique, Thermal Wave Microscopy (TWM), offers an alternative method of analysis. High frequency blanking of the scanning electron beam in an SEM produces thermal waves that propagate approximately 1–2 wavelength through a sample, are then carried by thermoacoustic waves and detected by a piezoelectric transducer. Dislocations, microcracks, and voids will disturb this wave and the resulting image will show a change in contrast (bright or dark) at the defect site. Resolution is dependent on the thermal properties of the material being analyzed as well as on the accelerating voltage, beam current, beam blanking frequency and phase of the electron beam. TWMim ages of dislocation networks in as-received GaAs are very similar in appearance to the results of molten KOH etching. TWM is a relatively new technique for microanalysis. Its full range of applications are still being explored. For determination of dislocation networks it is a faster, less cumbersome method of analysis. TWM is a basically nondestructive technique involving none of the uncertainties of molten KOH etching (etch time, etch uniformity). For this reason TWM is recommended as an alternative analytical technique.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 69: Symposium D – Materials Characterization , 1986 , 385
Copyright
Copyright © Materials Research Society 1986

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References

1. Ishii, M., Hirano, R., Kan, H., and Ito, A., Japan J. Appl. Phys. 15 (4), 645 (1976).CrossRefGoogle Scholar
2. Takenaka, T., Hayashi, H., Yamamoto, S., Murata, K., and Inoguchi, T., Japan J. Appl. Phys. 17 (2), 447 (1978).Google Scholar
3. Lessoff, H. and Tseng, W., Mat. Res. Soc. Symp. 46, 397–401 (1985).Google Scholar
4. Tseng, W. F., Lessof, H. and Gorman, R., J. Electrochem. Soc., 132 (12), 3067–3068 (1985).Google Scholar
5. Brandis, E. and Rosencwaig, A., Appl. Phys. Lett. 37 (1), 98–100 (1980).Google Scholar
6. Rosencwaig, A. in Scanned Image Microscopy, edited by Ash, E. A. (Academic Press Inc., London, 1980), p. 291–317.Google Scholar
7. Opsal, J. and Rosencwaig, A., J. Appl. Phys. 53 (6), 4240–4246 (1982).Google Scholar
8. Rosencwaig, A., Scanning Electron Microscopy 1984 (IV), 1611–1628 (1984).Google Scholar
9. Kirkendall, T. D. and Remmel, T. P., Journal de Physique, ColloqueC2, 45 (2) C2–877 (1984).Google Scholar