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Determination of Composition and Linear Lattice Expansion Coefficient in Si1−x Gex/Si Thin Films by Simulation of X-Ray Rocking Curves
Published online by Cambridge University Press: 22 February 2011
Abstract
By simulation of X-ray rocking curves of Si-Ge alloys grown on Si by molecular beam epitaxy and of Ge implanted samples, the Ge composition, the linear lattice expansion coefficient, the strain depth-distribution and the static Debye-Waller factor in the MBE alloys have been determined.
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- Copyright © Materials Research Society 1991
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