Hostname: page-component-77c89778f8-cnmwb Total loading time: 0 Render date: 2024-07-20T20:36:39.887Z Has data issue: false hasContentIssue false
  • English
  • Français

Determination of Burgers Vector of Screw Dislocations in 6H-SiC Single Crystals by Synchrotron White Beam X-Ray Topography

Published online by Cambridge University Press:  15 February 2011

W. Si ,
M. Dudley ,
C. Carter ,
R. Glass  and
V. Tsvetkov
W. Si
Affiliation:
Dept. Materials Science & Engineering, SUNY at Stony Brook, Stony Brook, NY 11794–2275
M. Dudley
Affiliation:
Dept. Materials Science & Engineering, SUNY at Stony Brook, Stony Brook, NY 11794–2275
C. Carter
Affiliation:
Cree Research, Inc., 2810 Meridian Parkway, Suite 176, Durham, NC 27713
R. Glass
Affiliation:
Cree Research, Inc., 2810 Meridian Parkway, Suite 176, Durham, NC 27713
V. Tsvetkov
Affiliation:
Cree Research, Inc., 2810 Meridian Parkway, Suite 176, Durham, NC 27713
Get access

Abstract

Individual screw dislocations along the [0001] axis in 6H-SiC single crystals have been characterized by means of Synchrotron White Beam X-ray Topography (SWBXT). The magnitude of the Burgers vector was determined from: (1) the diameter of circular diffraction-contrast images of dislocations in back-reflection topographs, (2) the width of bi-modal images associated with screw dislocations in transmission topographs, (3) the magnitude of the tilt of the lattice planes on both sides of dislocation core in projection topographs, and (4) also the magnitude of the tilt of the lattice planes in section topographs. All of the four methods showed reasonable consistency. The sense of the Burgers vector can also be deduced from the abovementioned tilt of the lattice planes. Results revealed that in 6H-SiC a variety of screw dislocations can be found with Burgers vector magnitude ranging from 1c to 7c (c is the lattice constant along [0001] axis). This work demonstrates that SWBXT can be used as a quantitative technique for detailed analyses of line defect configurations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 437: Symposium DD – Applications of Synchrotron Radiation to III , 1996 , 129
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Tsvetkov, V. F., Allen, S. T., Kong, H. S., and Carter, C. H. Jr.,, presented at International Conference on SiC and Related Materials, Kyoto, Japan, Sept. 18 - 21, 1995, to be published.Google Scholar
2. Frank, F. C., Acta Cryst., 4, 497 (1951).Google Scholar
3. Verma, A. R., Crystal Growth and Dislocations, (Butterworths, London, 1953), pp. 166–172.Google Scholar
4. Sunagawa, I. and Bennema, P., J. Crystal Growth, 53, 490 (1981).Google Scholar
5. Krishna, A. P., Jiang, S. S., and Lang, A. R., J. Crystal Growth, 71, 41 (1985).Google Scholar
6. Komatsu, H. and Miyashita, S., Jpn. J. Appl. Phys., 32, 1,478 (1993).Google Scholar
7. Dudley, M. etal., J. Phys. D: Appl. Phys., 28, A63 (1995).Google Scholar
8. Dudley, M., Si, W., Wang, S., Carter, C. Jr., Glass, R., and Tsvetkov, V., to be published.Google Scholar
9. Wang, S., Ph.D. Thesis, State University of New York at Stony Brook, 1995.Google Scholar
10. Klapper, H., J. Appl. Cryst., 9, 310 (1976).Google Scholar
11. Mardix, S., Lang, A. R., and Blech, I., Phil. Mag., 24, 683 (1971).Google Scholar
12. Miltat, J., in Characterization of Crystal Growth Defects by X-Ray Methods, edited by Tanner, B. K. and Bowen, D. K. (Plenum Press, New York, 1980), p. 408.Google Scholar
13. Tanner, B. K., Midgley, D., and Safa, M., J. Appl. Cryst., 10, 281 (1977).Google Scholar
14. Miltat, J. E. A. and Bowen, D. K., J. Appl. Cryst., 8, 657 (1975).Google Scholar