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Details of the Defect Profile in Self-ion Implanted Silicon

Published online by Cambridge University Press:  22 February 2011

P.X. Zhang ,
R.D. Goldberg ,
I.V. Mitchell ,
P.J. Schultz  and
D.J. Lockwood
P.X. Zhang
Affiliation:
Department of Physics, University of Western Ontario, London, Ontario. Canada, N6A 3K7;
R.D. Goldberg
Affiliation:
Department of Physics, University of Western Ontario, London, Ontario. Canada, N6A 3K7;
I.V. Mitchell
Affiliation:
Department of Physics, University of Western Ontario, London, Ontario. Canada, N6A 3K7;
P.J. Schultz
Affiliation:
Department of Physics, University of Western Ontario, London, Ontario. Canada, N6A 3K7;
D.J. Lockwood
Affiliation:
Institute for Microstructural Sciences, National Research Council Canada, Ottawa, Canada, K1A 0R6
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Abstract

Raman spectra excited at two laser wavelengths are used to study the damage in self-implanted silicon. It was found that the contributions from the damaged surface crystalline and a-Si layers can be distinguished and separated, based on the different light absorption coefficients. A defect-activated low frequency band in the damaged surface crystalline Si layer was revealed. In totally amorphized samples the Raman spectra excited by 457.9 and 647.1 nm show different scattering intensity ratios for the optical- and acoustic-like-phonons. This novel result seems to indicate a depth dependent variation of the disordering in the amorphous layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 87
Copyright
Copyright © Materials Research Society 1994

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References

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