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Detailed Analysis and Computationally Efficient Modeling of Ultra-Shallow Dopant Profiles Obtained by Low Energy B, Bf2, and as Ion Implantation

Published online by Cambridge University Press:  21 February 2011

K. B. Parab ,
S.-H. Yang ,
S. J. Morris ,
S. Tian ,
M. Morris ,
B. Obradovich ,
A. F. Tasch ,
D. Kamenitsa ,
R. Simonton  and
C. Magee
K. B. Parab
Affiliation:
Microelectronics Research Center, ECE Department, University of Texas at Austin, TX 78712
S.-H. Yang
Affiliation:
Microelectronics Research Center, ECE Department, University of Texas at Austin, TX 78712
S. J. Morris
Affiliation:
Microelectronics Research Center, ECE Department, University of Texas at Austin, TX 78712
S. Tian
Affiliation:
Microelectronics Research Center, ECE Department, University of Texas at Austin, TX 78712
M. Morris
Affiliation:
Microelectronics Research Center, ECE Department, University of Texas at Austin, TX 78712
B. Obradovich
Affiliation:
Microelectronics Research Center, ECE Department, University of Texas at Austin, TX 78712
A. F. Tasch
Affiliation:
Microelectronics Research Center, ECE Department, University of Texas at Austin, TX 78712
D. Kamenitsa
Affiliation:
Eaton Corporation, Austin, TX 78758
R. Simonton
Affiliation:
Eaton Corporation, Austin, TX 78758
C. Magee
Affiliation:
Evans East, Plainsboro, NJ 08536
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Abstract

With increasing levels of integration, future generations of integrated circuit technology will require extremely shallow dopant profiles. Ion implantation has long been used in semiconductor material processing and will be a vitally important technique for obtaining ultra-shallow dopant profiles. However, implant channeling for low energy ion implantation must be understood and minimized. We report the results of a detailed experimental analysis of 275 ultra-shallow boron, BF2, and arsenic as-implanted profiles, and the development of an accurate and computationally efficient model for ultra-shallow implants.

The ultra-shallow dopant profiles have been modeled by using the Dual-Pearson approach, which employs a weighted sum of two Pearson functions to simulate the profiles. The computationally efficient model covers the following range of implant parameters: implant species B, BF2, As; implant energies from 1 keV to 15 keV; any dose; tilt angles from 0° to 10°; all rotation angles (0°-360°). This experimental analysis is important for the development of scaled devices with ultra-shallow junctions, and the computationally efficient model will enable process simulators to predict ultra-shallow as-implanted profiles accurately.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 769
Copyright
Copyright © Materials Research Society 1996

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References

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