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Design of Atcd three Color Detector for Color Detection in Transient Regime

Published online by Cambridge University Press:  10 February 2011

F. Irrera ,
F. Palma ,
F. Lemmi  and
M. Diotallevi
F. Irrera
Affiliation:
Department of Electronic Engineering, via Eudossiana 18, 00184 Roma, (Italy)
F. Palma
Affiliation:
Department of Electronic Engineering, via Eudossiana 18, 00184 Roma, (Italy)
F. Lemmi
Affiliation:
Department of Electronic Engineering, via Eudossiana 18, 00184 Roma, (Italy)
M. Diotallevi
Affiliation:
Department of Electronic Engineering, via Eudossiana 18, 00184 Roma, (Italy)
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Abstract

In this paper we present the characterization of an ATCD three color detector used in the charge integration regime, as necessary in large area matrices. In particular, we present linearity measurements of mesa insulated devices and characterization of the self-bias process occurring in the transient read-out of stacked structures. A new system architecture is introduced which considers interlaced row charge restore, and separates the charge restore process from the charge sampling process in order to reach self-bias within a short frame time.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 309
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

[1] Cesare, G. de, Irrera, F., Lemmi, F., Palma, F., Appl. Phys. Lett. 66, N. 10, (1996), p. 1178 Google Scholar
[2] Irrera, F., Lemmi, F., Palma, F., IEEE Trans. on Electron Devices, 44, p. 1410 Google Scholar
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[5] Irrera, F., Lemmi, F., Palma, F., presented at ICAMS 97, to be published in Journal of Non-Crystalline Solids.Google Scholar