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Design and Performance of Nitride-based UV LEDs

  • M. H. Crawford (a1), J. Han (a1), R. J. Shul (a1), M. A. Banas (a1), J. J. Figiel (a1) and L. Zhang (a1)...

Abstract

We overview several of the challenges in achieving high efficiency nitride-based UV (< 400 nm) LEDs. The issue of optical efficiency is presented through temperature-dependent photoluminescence studies of various UV active regions. These studies demonstrate enhanced optical efficiencies for active regions with In-containing alloys ( InGaN, AlInGaN). We compare the performance of two distinct UV LED structures. GaN/AlGaN quantum well LEDs with λ < 360 nm emission have demonstrated output powers > 0.1 mW, but present designs suffer from internal absorption effects. InGaN/AlInGaN quantum well LEDs with 370 nm< λ < 390 nm emission and > 1 mW output power are also presented.

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Design and Performance of Nitride-based UV LEDs

  • M. H. Crawford (a1), J. Han (a1), R. J. Shul (a1), M. A. Banas (a1), J. J. Figiel (a1) and L. Zhang (a1)...

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