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Derelaxation of Amorphous Silicon by Ion Implantation: Optical Characterization

  • R. Reitano (a1), M. G. Grimaldi (a1), P. Baeri (a1), E. Bellandi (a2), A. Borghesi (a2) and G. Baratta (a3)...

Abstract

The transition between relaxed and unrelaxed amorphous silicon can be obtained by thermal treatment of the unrelaxed amorphous or by low dose ion irradiation of the relaxed material. In both cases a variation in the short range order has been invoked to explain the behavior of the structural changes probed by various techniques. In this work we study the influence of such changes on the optical properties of a-Si in the region of the transition between the relaxed and the unrelaxed states. We show that a progressive variation of the optical constant in the visible-near infrared region upon derelaxation occurs. Therefore, significant modifications of the electron density of state in the region above the optical gap are associated with the changes in the short range order probed by Raman spectroscopy.

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[1] Sinke, W., Warabisako, T., Miyao, M., Tokuyama, T., Roorda, S. and Saris, F.W., J. Non-Cryst. Solids 29, 308 (1988).
[2] Donovan, E.P., Spaepen, F., Poate, J.M. and Jacobson, D.C., Appl. Phys. Lett. 55, 1516 (1989).
[3] see for example Ravindra, N.M. and Narayan, J., J. Appl. Phys. 60, 1139 (1986).
[4] Fredrickson, J.E., Waddel, C.N., Spitzer, W.G. and Hubbler, G.H., Appl. Phys. Lett. 40, 172, (1982).
[5] Waddel, C.N., Spitzer, W.G., Fredrickson, J.E., Hubbler, G.H., Kennedy, T.A., J. Appl. Phys. 55, 4361 (1984).
[6] Baeri, P., Barbarino, A.E., Campisano, S.U., Grimaldi, M.G., Foti, G. and Rimini, E., in Laser and Electron Beam Solid Interaction with Solids, edited by Appleton, B.R. and Keller, G.K. (Elsevier, Amsterdam 1982), p. 227.
[7] Roorda, S., Sinke, W.C., Poate, J.M., Dierker, S., Dennis, B.S., Eaglesham, D.J. and Spaepen, F., Mater. Res. Soc. Symp. Proc. 157, Pittsburgh PA, 1990, p. 709.
[8] Forohui, A.R. and Bloomer, I., Phys. Rev. B34, 7018 (1986).
[9] Cocka, J., Vanecek, M., Triska, A., in Amorphous Silicon and Related Materials, edited by Fritzsche, H. (World Scientific Publishing, 1986), p. 297.
[10] Mott, N.F. and Davis, E.A., Electronic Processes in Non-Crystalline Materials (Oxford University Press, 1979).
[11] Tauc, J., in Amorphous and Liquid Semiconductors, edited by Tauc, J., (Plenum Press 1974), chapter 4.
[12] Jackson, W.B., Oh, S.J., Tsai, C.C. and Allen, J.W., Phys. Rev. Lett. 53, 1481 (1984).
[13] Von Roedem, B., Ley, L. and Cardona, M., Phys. Rev. Lett. 39, 1576 (1977).
[14] Prova, A. and Selloni, A., in Tetrahedrallv Bonded Amorphous Semiconductors, edited by Adler, D. and Frietzsche, H. (Plenum Press, 1985), p. 271.
[15] Cody, G.D., in Semiconductors and Semimetals, vol. 21B, edited by Pankove, J. (Academic Press, 1984), p.ll.
[16] Reichardt, J., Ley, L. and Johnson, R.L., J. Non-Cryst. Solids 59/60, 329(1983).

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Derelaxation of Amorphous Silicon by Ion Implantation: Optical Characterization

  • R. Reitano (a1), M. G. Grimaldi (a1), P. Baeri (a1), E. Bellandi (a2), A. Borghesi (a2) and G. Baratta (a3)...

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