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Depth Gradients in Porous Silicon: How to Measure Them and How to Avoid Them

  • M. Thönissen (a1), M. G. Berger (a1), W. Theiβ (a2), S. Hilbrich (a2), M. Krüger (a1), R. Arens-Fischer (a1), S. Billat (a1), G. Lerondel (a3) and H. Lüth (a1)...

Abstract

For the formation of single layers and layer systems the depth homogeneity of porous silicon (PS) plays a key role. We have measured qualitatively and quantitatively structural gradients in p-PS layers with increasing layer thicknesses by fitting reflectance spectra in the infrared and by measuring thickness oscillations in the reflectance during the formation of PS layers. These results allow us to give recipes for the formation of PS layers with a homogenous optical thickness in depth.

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Depth Gradients in Porous Silicon: How to Measure Them and How to Avoid Them

  • M. Thönissen (a1), M. G. Berger (a1), W. Theiβ (a2), S. Hilbrich (a2), M. Krüger (a1), R. Arens-Fischer (a1), S. Billat (a1), G. Lerondel (a3) and H. Lüth (a1)...

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