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Deposition Uniformity Control in a Commercial Scale HTO-CVD Reactor

Published online by Cambridge University Press:  01 February 2011

Shigeru Sakai ,
Masaaki Ogino ,
Ryosuke Shimizu  and
Yukihiro Shimogaki
Shigeru Sakai
Affiliation:
sakai-shigeru@fujielectric.co.jp, Fujielectric Advanced Technology Co.,Ltd., Electron Device Technology Center, 4-18-1 Tsukama, Matsumoto, 390-0821, Japan, +81-263-27-8862, +81-263-28-5573
Masaaki Ogino
Affiliation:
ogino-masaaki@fujielectric.co.jp, Fujielectric Advanced Technology Co.,Ltd., 4-18-1,Tsukama,Matsumoto, Nagano, 390-0821, Japan
Ryosuke Shimizu
Affiliation:
shimizu-ryosuke@fujielectric.co.jp, Fujielectric Advanced Technology Co.,Ltd., 4-18-1,Tsukama,Matsumoto, Nagano, 390-0821, Japan
Yukihiro Shimogaki
Affiliation:
shimo@dpe.mm.t.u-tokyo.ac.jp, University of Tokyo, School of Engineering, 7-3-1,Hongo,Bunkyo-ku, Tokyo, 113-8656, Japan
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Abstract

High-temperature silicon dioxide chemical vapor deposition (HTOCVD), using SiH2Cl2 and N2O, can realize dense and conformal oxide film, not only on large size silicon wafers, but even inside of microscopic silicon trenches, at high-temperature around 800°C.

In this work, we investigated the kinetics of HTOCVD using a commercial scale low pressure (LP) CVD reactor, focusing on the correlation between deposition rate and surface-to-volume ratio (S/V ratio), which is a specific surface area of substrate wafer divided by the space volume between two adjacent wafers. We also investigated the deposition rate profile on wafers, and along the axial direction of the reactor near the region where one, two or three substrate wafers are extracted from the quartz holder. The deposition rate profiles on wafer characteristically change from skillet-like to pancake-like, according to the increase of wafer spacing. The influence on the deposition rate of wafer spacing spreads to ranges not only downstream, but also upstream in the gas flow. These experimental results strongly suggest that in the HTOCVD gas-phase reactions through intermediate states of active species contribute to deposition reaction as well as direct deposition reaction of source gases on Si surface.

Keywords

chemical vapor deposition (CVD) (deposition)chemical vapor deposition (CVD) (chemical reaction)film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 989: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007 , 2007 , 0989-A08-08
Copyright
Copyright © Materials Research Society 2007

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