Skip to main content Accessibility help
×
Home

Deposition of tungsten on silicon dioxide by GeH4 reduction of WF6

  • T. G. M. Oosterlaken (a1), G. J. Leusink (a1), C. A. van der Jeugd (a1), G. C. A. M. Janssen (a1) and S. Radelaar (a1)...

Abstract

Chemical Vapour Deposition of tungsten on silicon dioxide by means of GeH4 reduction of WF6 is studied. The influence of the ambient gas on the nucleation of tungsten is examined. Experiments have been performed in both Ar and H2 ambient. It is found that an Ar ambient hinders nucleation on silicon dioxide in comparison with a hydrogen ambient. Adhesion of the film and uniformity over the wafer are acceptable for the films deposited in hydrogen ambient.

Copyright

References

Hide All
[1] See, for instance, the proceedings of the workshops on Tungsten and other Refractory Metals for VLSI I-V (Materials Research Society, Pittsburgh, PA, 19851990)
[2] Broadbent, E. K. and Ramiller, C. L., J. Electrochem. Soc. 132, 1243, (1985)
[3] Kusumoto, Y., Takakuwa, K., Hashinokuchi, H., Ikuta, T. and Nakayama, I., in Tungsten and other Refractory metals for VLSI Applications III, edited by Wells, V. A. (MRS, Pittsburgh, PA, 1988), p. 103
[4] van der Jeugd, C. A., Leusink, G. J., Janssen, G. C. A. M., and Radelaar, S., Appl. Phys. Lett., 57, 354, (1990).
[5] Sebastian I adhesion tester, Quad Group
[6] Leusink, G. J., Oosterlaken, T. G. M., van der Jeugd, C. A., Janssen, G. C. A. M., and Radelaar, S., Appl. Surf. Sci. 53, 47 (1991)
[7] Kendall, K., J. Appl Phys D, 4, 1186 (1971)
[8] van der Jeugd, C. A., Leusink, G. J., Janssen, G. C. A. M. and Radelaar, S., J. Appl. Phys. 70 (4), 2353, (1991)
[9] Kwakman, L. F. T., Vermeulen, W. J. C., Granneman, E. H. A., Hitchman, M. L., in Tungsten and other Refractory metals for VLSI Applications II, edited by Broadbent, E. K. (MRS, Pittsburgh, PA, 1987), p. 377
[10] Schmitz, J. E. J., Buiting, M. J. and Ellwanger, R. C., in Tungsten and other Refractory metals for VLSI Applications IV, edited by Blewer, R. S. (MRS, Pittsburgh, PA, 1989), p. 27

Deposition of tungsten on silicon dioxide by GeH4 reduction of WF6

  • T. G. M. Oosterlaken (a1), G. J. Leusink (a1), C. A. van der Jeugd (a1), G. C. A. M. Janssen (a1) and S. Radelaar (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed