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Deposition of TiN Films by Reactive Sputtering with Targets Facing Type of High Rate Sputtering

  • M. Naoe (a1) and Y. Hoshi (a2)

Abstract

TiN films lμm thick were deposited on SKH55 alloy substrate at various substrate bias voltage by a reactive sputtering of Ti target in a mixture of Ar (1 mTorr) and N2 (1 mTorr) with a Target Facing type of high rate sputtering apparatus. The color of the film changes in the order of yellow, golden, silver and golden as the substrate bias voltage increases from 0 to 200 V. The reflection ratio and Vicker's hardness of the film also changes with the bias voltage. Besides, the change of the reflection factor corresponds well to the change of theVicker's hardness of the film. The films with silver color and maximum reflection ratio which are obtained at a rf bias voltage around 100 V, have the largest value of the Vicker's hardness about 3500. While, the films with golden color and small reflection factor, which are obtained at both rf bias voltage around 80 V and 150 V, have the lowest Vicker's hardness of about 1500.

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(1) Hoshi, Y., Naoe, M. and Yamanaka, S.; Japan.J.Appl.Phys.,16(1977) 1715
(2) Naoe, M., Yamanaka, S. and Hoshi, Y.; IEEE Trans.Mag.,MAG–16 (1980) 646
(3) Hoshi, Y., Kojima, M., Naoe, M. and Yamanaka, S.; IEEE Trans.Mag.,MAG 18 (1982) 1433
(4) Matsuoka, M., Hoshi, Y., Naoe, M. and Yamanaka, S.; IEEE Trans.Mag.,MAG–18(1982) 1119
(5) Matsuoka, M., Hoshi, Y., Naoe, M. and Yamanaka, S.; Proc.Int'l Ion Engineering Congress, ISIAT'83 & IPAT'83 (Kyoto), (1983)1017

Deposition of TiN Films by Reactive Sputtering with Targets Facing Type of High Rate Sputtering

  • M. Naoe (a1) and Y. Hoshi (a2)

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