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Deposition of Ti(C,N) Thick Films by ILPCVD Starting from TDMAT

Published online by Cambridge University Press:  10 February 2011

S. Gilles ,
N. Bourhila ,
J. P. Senateur ,
R. Madar ,
R. A. Levy  and
E. Blanquet
S. Gilles
Affiliation:
INPG-LMGP, UMR 5628 CNRS, BP 46, 38402 St Martin d'Hères, (France)
N. Bourhila
Affiliation:
INPG-LMGP, UMR 5628 CNRS, BP 46, 38402 St Martin d'Hères, (France)
J. P. Senateur
Affiliation:
INPG-LMGP, UMR 5628 CNRS, BP 46, 38402 St Martin d'Hères, (France)
R. Madar
Affiliation:
INPG-LMGP, UMR 5628 CNRS, BP 46, 38402 St Martin d'Hères, (France)
R. A. Levy
Affiliation:
NJIT, University Heights, Newark, New Jersey 07102, (USA)
E. Blanquet
Affiliation:
INPG-LTPCM, UMR 5614 CNRS, BP 75, 38402 St Martin d'Hères, (France).
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Abstract

Ti(C,N) films have been deposited from tetrakis(dimethylamido)titanium (TDMAT) and ammonia by CVD at low pressure using pulsed Injection technique (ILPCVD). This procedure allows us to easily deposit Ti(C,N) films with a good reproducibility. It is an efficient technique to control growth rates and composition of coatings. The liquid TDMAT undergoes no degradation during deposition since it is kept at room temperature. Ti(C,N) films, with fee structure and fine grains were deposited at substrate temperature varying from 200 to 500 °C. Composition of films is controlled by substrate temperature and ammonia flow rate. Growth rates as high as 2 μm/min are reached for deposition of Ti(C,N) films at low temperature (350 °C).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 495: Symposium W – Chemical Aspects of Electronic Ceramics Processing , 1997 , 177
Copyright
Copyright © Materials Research Society 1998

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References

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