Skip to main content Accessibility help
×
Home

Deposition of Photoluminescent Nanocrystalline Silicon Films by SiF4-SiH4-H2 Plasmas

  • G. Cicala (a1), G. Bruno (a1), P. Capezzuto (a1), L. Schiavulli (a2), V. Capozzi (a2) and G. Perna (a2)...

Abstract

Visible photoluminescence at 1.62 eV has been observed at room temperature from fluorinated and hydrogenated nanocrystalline silicon (nc-Si:H,F) produced in a typical plasma enhanced chemical vapor deposition system. The use of SiF4-SiH4-H2 mixture, because of the H2 dilution and the presence of SiF4, favours the amorphous - crystalline transition through the etching process of the amorphous phase. The x - ray diffraction measurements give an average grain size of about 100 Å. The presence of these nanocrystals shifts the absorption edge of the films towards higher energy. An energy gap of 2.12 eV is estimated, although the hydrogen content in the material is only 4.5 at. %. The temperature dependence of the photoluminescence behaves similarly to that of porous silicon.

Copyright

References

Hide All
1. Veprek, S., Wirschem, T., Ruckschloβ, M., Tamura, H. and Oswald, J., in Microcrystallinc and Nanocrvstalline Semiconductors, edited by Collins, R. W., Tsai, C. C., Hirose, M., Kock, F. and Brus, L. (Mater. Res. Soc. Symp. Proc. 358, Pittsburgh, PA 1995), pp. 99 - 110.
2. Canham, L. T., Appl. Phys. Lett. 57, 1046 (1990).
3. Lehmann, V. and Foil, H., J. Electrochem. Soc. 37, 653 (1990).
4. Toyama, T., Matsui, T., Kurokawa, Y., Okamoto, H. and Hamakawa, Y., Appl. Phys. Lett. 69, 1261 (1996).
5. Solomon, I., Drévillon, B., Shirai, H. and Layadi, N., J. Non-Cryst. Solids 164–166, 989 (1993).
6. Oda, S. and Otobe, M., in Macrocrystalline and Nanocrvstalline Semiconductors, edited by Collins, R. W., Tsai, C. C., Hirose, M., Kock, F. and Brus, L. (Mater. Res. Soc. Symp. Proc. 358, Pittsburgh, PA 1995), pp. 721731.
7. Liu, X., Wu, X., Bao, X. and He, Y., Appl. Phys. Lett. 64, 220 (1994).
8. Courteille, C., Dotier, J.-L., Dutta, J., Hollenstein, Ch., Howling, A. A. and Stoto, T., J. Appl. Phys. 78, 61 (1995).
9. Tachibana, K., Shirafuji, T., Hayashi, Y., Maekawa, S. and Morita, T., Jpn. J. Appl. Phys. 33, 4191 (1994).
10. Cicala, G., Capezzuto, P., Bruno, G., Schiavulli, L., Perna, G. and Capozzi, V., J. Appl. Phys. 80, (11) xx (1996).
11. Zheng, X. L., Wang, W. and Chen, H. C., Appl. Phys. Lett. 60, 986 (1992).

Deposition of Photoluminescent Nanocrystalline Silicon Films by SiF4-SiH4-H2 Plasmas

  • G. Cicala (a1), G. Bruno (a1), P. Capezzuto (a1), L. Schiavulli (a2), V. Capozzi (a2) and G. Perna (a2)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed