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Deposition of High Quality SiO2 Films Using Teos by ECR Plasma

Published online by Cambridge University Press:  21 February 2011

K. Sano ,
H. Tamamaki ,
M. Nomura ,
S. Wickramanayaka ,
Y. Nakanishi  and
Y. Hatanaka
K. Sano
Affiliation:
Development Division II, Suzuki Motor Corporation, 300 Takatsuka-cho, Hamamatsu-shi
H. Tamamaki
Affiliation:
Development Division II, Suzuki Motor Corporation, 300 Takatsuka-cho, Hamamatsu-shi
M. Nomura
Affiliation:
Development Division II, Suzuki Motor Corporation, 300 Takatsuka-cho, Hamamatsu-shi
S. Wickramanayaka
Affiliation:
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu-shi, rdwsun@rie.shizuoka.ac.jp
Y. Nakanishi
Affiliation:
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu-shi, rdwsun@rie.shizuoka.ac.jp
Y. Hatanaka
Affiliation:
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu-shi, rdwsun@rie.shizuoka.ac.jp
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Abstract

SiO2 thin firms were fabricated in a remote electron cyclotron resonance (ECR) plasma by tctraethoxysilane (TEOS) as the silicon source. Oxygen was used as the plasma gas. A mesh was placed between the TEOS gas outlet and the substrate. In the present investigation a-SiO2 films were deposited with and without the mesh and film properties were studied comparatively. The deposition rate increased when the mesh was attached. The optimum deposition rate is observed when the mesh voltage was zero, that is the mesh was grounded. The deposition rates of both methods were also dependnt on the TEOS flow rate, applied microwave power and the substrate temperature. These three parameters have significant roles in controlling the film quality. Good quality SiO2 films can be obtained with a higher deposition rate when a mesh is attached.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 539
Copyright
Copyright © Materials Research Society 1996

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