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Deposition of Fluorine Doped Tungsten Oxide Thin Films by Atmospheric Pressure Chemical Vapor Deposition

Published online by Cambridge University Press:  28 February 2011

James W. Proscia ,
Charles H. Winter ,
Gene P. Reck  and
Gang Gang Wen
James W. Proscia
Affiliation:
Ford Motor Company, Glass Division, Dearborn, MI 48120
Charles H. Winter
Affiliation:
Department of Chemistry, Wayne State University, Detroit, MI 48202.
Gene P. Reck
Affiliation:
Department of Chemistry, Wayne State University, Detroit, MI 48202.
Gang Gang Wen
Affiliation:
Department of Chemistry, Wayne State University, Detroit, MI 48202.
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Abstract

Polycrystalline fluorine doped tungsten oxide thin films were deposited onto glass substrates by reacting tungsten hexafluoride, difluoroethane, and isopropanol. The reaction was performed in an atmospheric pressure chemical vapor deposition reactor at a temperature of approximately 400 °C. The electrical conductivity and spectral properties were suggestive of n-type substitutional doping in which oxygen is partially replaced by fluorine. Temperature dependent resistivity measurements were consistent with the presence of polarons. The films were blue in color with enhanced reflectance and absorbance in the IR. These optical characteristics are potentially useful in improving the solar control properties of glass. Scanning electron microscopy revealed a faceted surface morphology. The fluorine atom concentration decreased when the films were annealed in air.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 933
Copyright
Copyright © Materials Research Society 1993

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References

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