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Deposition of Fluorinated Amorphous Carbon Thin Films with Low Dielectric Constant and Thermal Stability

Published online by Cambridge University Press:  17 March 2011

Sang-Soo Han  and
Byeong-Soo Bae
Sang-Soo Han
Affiliation:
Laboratory of Optical Materials and Coating(LOMC), Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology(KAIST), 373-1, Kusongdong, Yusonggu, Taejon, 305-701, Korea
Byeong-Soo Bae
Affiliation:
Laboratory of Optical Materials and Coating(LOMC), Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology(KAIST), 373-1, Kusongdong, Yusonggu, Taejon, 305-701, Korea
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Abstract

Fluorinated amorphous carbon (a-C:F) thin films were deposited by inductively coupled plasma enhanced chemical vapor deposition (ICP-CVD) with increasing CF4:CH4 gas flow rate ratio, and then annealed with increasing annealing temperature (100, 200, 300, and 400.). We have found the reduction mechanism of the dielectric constant and the thermally stable condition for the a-C:F films. On the basis of the results, the optimal condition to satisfy both the low dielectric constant and the thermal stability is followed as; the a-C:F films have to have the compatible F content to make a compromise between the two properties; the C-Fx bonding configuration has to exist as a form of C-F2 & C-F3 instead of C-F; The films should be somewhat cross-linked structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 612: Symposium D – Materials, Technology & Reliability for Advanced Interconnects.. , 2000 , D5.6.1
Copyright
Copyright © Materials Research Society 2000

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