Various dielectric thin films have been studied for electroluminescence display (ELD) application to improve dielectric constant and breakdown voltage. In this work, amorphous BaTiO3 thin films were deposited on indium tin oxide (ITO) - coated glass substrates by atomic layer epitaxy (ALE) using metalorganic precursors. Influences of deposition conditions on microstructure, interface characteristics and dielectric properties are investigated. It was possible to obtain dielectric films with good dielectric properties and textured, flat surface microstructure without defects due to the improvement of qualities of the grown films. These results were examined by XRD, SEM and AES analysis.