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Deposition of a-Si:H Devices in a RTR System for Photovoltaic and Macroelectronic Applications

Published online by Cambridge University Press:  15 February 2011

M. Scholz ,
D. Peros  and
M. Böhm
M. Scholz
Affiliation:
Institut für Halbleiterelektronik (IHE), Universität GH-Siegen, Hölderlinstr. 3, D-57068 Siegen, Germany
D. Peros
Affiliation:
Institut für Halbleiterelektronik (IHE), Universität GH-Siegen, Hölderlinstr. 3, D-57068 Siegen, Germany
M. Böhm
Affiliation:
Institut für Halbleiterelektronik (IHE), Universität GH-Siegen, Hölderlinstr. 3, D-57068 Siegen, Germany
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Abstract

This work presents first results of potential manufacturing processes for integrated series connected hydrogenated amorphous silicon (a-Si:H) thin film solar modules and/or pindiode/TFT based macroelectronic circuits on flexible tapes. A RTR (Reel-To-Reel) deposition system on laboratory scale has been built, The system consists of seven metal sealed LIHV stinless steel chambers to obtain ultra high vacuum as a basis for high quality a-Si:H layers, in order to support continuous movement of the tape in the RTR process the chambers cannot be isolated from each other. The necessary pressure difference between the sputtering chambers and the PECVD (Plasma Enhanced Chemical Vapor Deposition) chambers is provided by pressure stages. They are optimized for high molecular flow resistance without any influence on the moving substrate tape. The back metal contacts and the semitransparent TCO (Transparent Conductive Oxide) contacts are deposited by rf magnetron sputtering, the a-Si:H film system is deposited by PECVD. Parallel to the film deposition a Nd:YAG laser patterning system is coupled into one chamber. This allows for instance a total manufacturing of integrated series connected solar modules in one system without breaking the vacuum. Our present investigations focus on the deposition of doped and intrinsic high quality a-Si:H based layers in neighboring chambers. The quality of semiconducting films deposited in adjacent chambers is studied with regard to potential contamination effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 61
Copyright
Copyright © Materials Research Society 1999

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References

1. Schock, W., Shah, A., Proceedings of the 14th EC Photovoltaic Solar Energy Conference, p. 2000, (1997).Google Scholar
2. Guha, S., Xu, X., Yang, J., Banerjee, A., Mat. Res. Soc. Symp. Proc. 377, p. 621, (1995).Google Scholar
3. Fujikake, S., Tabuchi, K., Yoshida, T., Ichikawa, Y., Sakai, H., Mat. Res. Soc. Symp. Proc. 377 p. 609, (1995).Google Scholar
4. Kishi, Y., Inoue, H., Tanaka, H., Kouzuma, S., Murata, K., Sakai, S., Nishikuni, M., Wakisaka, K., Shibuya, H., Nishiwaki, H., Takeoka, A., Kuwano, Y., Proc. of the 22nd IEEE Photov. Spec. Conf., New York, p. 1213, (1991).Google Scholar
5. Scholz, M., Peros, D., Wagner, M., Böhm, M., Proceedings of the 2nd World Conference on Photovoltaic Solar Energy Conversion, p. 898, (1998).Google Scholar
6. Smith, A., D'ans, J., Allgemeine und anorganische Chemnie, Verlag G. Braun, (1931).Google Scholar
7. Heywang, W., Amorphe undpolykristalline Halbleiter, Springer Verlag, (1984).Google Scholar