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Deposition of AlN on WS2 (0001) Substrate by Atomic Layer Growth Process

Published online by Cambridge University Press:  10 February 2011

J-W. Chung  and
F.S. Ohuchi
J-W. Chung
Affiliation:
Department of Materials Science and Engineering, University of Washington, BOX 352120, Seattle, WA 98195.
F.S. Ohuchi
Affiliation:
Department of Materials Science and Engineering, University of Washington, BOX 352120, Seattle, WA 98195.
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Abstract

Close proximity of the lattice constant for tungsten disulfide and aluminum nitride has lead to an investigation to use WS2 as a potential substrate for the growth of AIN. Metal organic chemical vapor deposition(MOCVD) has been develop to fabricated WS2 thin films on Si(001) with their basal planes parallel to the substrate. AIN thin film was subsequently grown by atomic layer growth (ALG) process using dimethylamine-alane (DMEAA) and ammonia (NH3). Deposition conditions for WS2 thin films by MOCVD, and AIN growth on WS2 by ALG are described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 379
Copyright
Copyright © Materials Research Society 1997

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References

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