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Deposition And Characterization Of Silicon And Carbon Nitride

Published online by Cambridge University Press:  10 February 2011

A. F. Myers ,
D. A. Tucker ,
S. P. Bozeman ,
S. M. Camphausen ,
M. J. Powers ,
J. Bruley ,
J. J. Hren  and
J. J. Cuomo
A. F. Myers
Affiliation:
Materials Science and Engineering Department, North Carolina State University, P. O. Box 7907, Raleigh, NC 27695
D. A. Tucker
Affiliation:
Now at Lambda Technologies, 8600 Jersey Ct., Suite C, Raleigh, NC 27612
S. P. Bozeman
Affiliation:
Materials Science and Engineering Department, North Carolina State University, P. O. Box 7907, Raleigh, NC 27695
S. M. Camphausen
Affiliation:
Materials Science and Engineering Department, North Carolina State University, P. O. Box 7907, Raleigh, NC 27695
M. J. Powers
Affiliation:
Now at Commonwealth Scientific Corp., 500 Pendleton St., Alexandria, VA 22314
J. Bruley
Affiliation:
Materials Science and Engineering Department, Lehigh University, 5 Packer Ave., Bethlehem, PA 18015
J. J. Hren
Affiliation:
Materials Science and Engineering Department, North Carolina State University, P. O. Box 7907, Raleigh, NC 27695
J. J. Cuomo
Affiliation:
Materials Science and Engineering Department, North Carolina State University, P. O. Box 7907, Raleigh, NC 27695
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Abstract

We attempted to deposit carbon nitride films on flat Si (111) substrates and on sharp <111>-oriented silicon needles in a radio frequency (rf) inductively coupled plasma system utilizing a graphite source and a nitrogen plasma. The resultant polycrystalline films were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), Auger electron spectroscopy (AES), and electron energy loss spectroscopy (EELS). Both selected area electron diffraction (SAED) and lattice imaging were used to identify and characterize the particles, which grew as faceted crystals up to 1 Rm in size. From SAED, high resolution TEM, and EELS, it was found that the particles on the Si needles were α-Si3N4 and that those on the Si wafer were mostly β-Si3N4 and β-C3N4, with some β-C3N4 possible. Auger quantitative analysis suggests that β-C3N4 could be stabilized by the presence of silicon, resulting in a material with compositions CxSiyNz.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 410: Symposium S – Covalent Ceramics III-Science and Technology of Non-Oxides , 1995 , 323
Copyright
Copyright © Materials Research Society 1996

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References

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