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Deposition and Characterization of PECVD SiOC Films by Using Bistrimethylsilylmethane (BTMSM) Precursor

  • Yoon-Hae Kim (a1), Moo Sung Hwang (a1), Young Lee (a2) and Hyeong Joon Kim (a1)

Abstract

Carbon-containing silicon oxide (SiOC) is regarded as a potential low dielectric constant (low-κ) material for an interlayer dielectric (ILD) in next generation interconnection. In this study, we present the fundamental film properties and integration process compatibility of the low-κ SiOC film deposited by using bistrimethylsilylmethane (BTMSM) precursor. As more carbon was incorporated into film, both film density and dielectric constant decreased. The lowest κ-value, which we have obtained in this study, was 2.3 and the hardness of SiOC film was 1.1GPa as well as showing the thermal stability up to 500°C. In case of using conventional gases, organic components in SiOC film restricted etch rate. However, O2 addition could make it possible to obtaine a reasonable etch rate. The post-treatment of SiOC film in hydrogen plasma improved the resistance to O2 plasma in ashing process. The compatibility of SiOC film to the CMP process was also examined.

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Deposition and Characterization of PECVD SiOC Films by Using Bistrimethylsilylmethane (BTMSM) Precursor

  • Yoon-Hae Kim (a1), Moo Sung Hwang (a1), Young Lee (a2) and Hyeong Joon Kim (a1)

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