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The Dependence of Defect Density in GexSi1−x/Si Heterostructures Grown by Remote Plasma-Enhanced Chemical Vapor Deposition on Deposition Parameters

Published online by Cambridge University Press:  25 February 2011

D. Kinosky ,
R. Qian ,
T. Hsu ,
J. Irby ,
A. Mahajan ,
S. Thomas ,
S. Banerjee ,
A. Tasch ,
C. Magee  and
C.L. Grove
A. Tasch
Affiliation:
Department of Electrical and Computer Engineering, The University of Texas, Austin, TX 78712
C. Magee
Affiliation:
Evans East Inc.. Plainsboro, NJ 08536
C.L. Grove
Affiliation:
Motorola, Inc., Austin, TX 78721
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Abstract

The density of misfit dislocations in GexSi1−x films has been measured as a function of deposition temperature and r-f plasma power in Remote Plasma-enhanced Chemical Vapor Deposition (RPCVD). The misfit dislocation density decreases as the deposition temperature is lowered from 450°C to 410°C. As the plasma power is increased from 6.6 to 16W, the dislocation density peaks at lOW and then decreases with increasing power.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 445
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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