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Density-of-States Distribution In Disilane LPCVD Deposited Amorphous Silicon as Determinated By SCLC

Published online by Cambridge University Press:  28 February 2011

C. Manfredotti ,
G. Gervino ,
L. Montaldi ,
R. Varesio ,
A. Zanini  and
U. Nastasi
C. Manfredotti
Affiliation:
Istituto di Fisica Superiore, C.so M.D'Azeglio 46, 10125 - Torino, Italy and Gruppo Nazionale di Struttura della Materia, C.N.R., Italy
G. Gervino
Affiliation:
Istituto di Fisica Superiore, C.so M.D'Azeglio 46, 10125 - Torino, Italy and Gruppo Nazionale di Struttura della Materia, C.N.R., Italy
L. Montaldi
Affiliation:
Istituto di Fisica Superiore, C.so M.D'Azeglio 46, 10125 - Torino, Italy and Gruppo Nazionale di Struttura della Materia, C.N.R., Italy
R. Varesio
Affiliation:
Istituto di Fisica Superiore, C.so M.D'Azeglio 46, 10125 - Torino, Italy and Gruppo Nazionale di Struttura della Materia, C.N.R., Italy
A. Zanini
Affiliation:
Istituto di Fisica Superiore, C.so M.D'Azeglio 46, 10125 - Torino, Italy and Gruppo Nazionale di Struttura della Materia, C.N.R., Italy
U. Nastasi
Affiliation:
Istituto di Fisica Superiore, C.so M.D'Azeglio 46, 10125 - Torino, Italy and Gruppo Nazionale di Struttura della Materia, C.N.R., Italy
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Abstract

I-V characteristics have been measured in a-Si:H films deposited from Si2 H6 by LPCVD and have been analyzed according to a direct method. DOS distribution is thickness-dependent, similarly to what has been found on SiH deposited films, with values at Fermi level ranging from below 1016 cm-3 eV-1 up to 1018 cm-3 eV-1. Deposition temperature, at least in the interval 450 - 500°C, does not seem to affect DOS distribution. Hydrogen content is pratically constant in all the films. The only possible conclusion is that only thickness influences DOS distribution and that only for thickness larger than 0.8 μm it is possible to get densities at Fermi level below 1016 cm-3 eV-1.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 185
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

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