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Demultiplexer/Photodetector Integrated System Based on a-SiC:H Multilayered Structures

Published online by Cambridge University Press:  01 February 2011

Paula Louro ,
Manuela Vieira ,
M. A. Vieira ,
João Costa ,
Miguel Fernandes  and
Manuel Barata
Paula Louro
Affiliation:
plouro@deetc.isel.ipl.pt, ISEL, DEETC, Lisbon, Portugal
Manuela Vieira
Affiliation:
mv@isel.ipl.pt, ISEL, DEETC, R. Conselheiro Emídio Navarro, Lisbon, 1954-114, Portugal, +351218317180, +351218317114
M. A. Vieira
Affiliation:
mvieira@deetc.isel.ipl.pt, ISEL, DEETC, R. Conselheiro Emídio Navarro, Lisbon, 1954-114, Portugal, +351218317180, +351218317114
João Costa
Affiliation:
jcosta@deetc.isel.ipl.pt, ISEL, DEETC, R. Conselheiro Emídio Navarro, Lisbon, 1954-114, Portugal, +351218317180, +351218317114
Miguel Fernandes
Affiliation:
mfernandes@deetc.isel.ipl.pt, ISEL, DEETC, R. Conselheiro Emídio Navarro, Lisbon, 1954-114, Portugal, +351218317180, +351218317114
Manuel Barata
Affiliation:
mmb@isel.ipl.pt, ISEL, DEETC, R. Conselheiro Emídio Navarro, Lisbon, 1954-114, Portugal, +351218317180, +351218317114
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Abstract

In this paper we present results on the use of multilayered a-SiC:H heterostructures as an integrated device for simultaneous wavelength-division demultiplexing and measurement of optical signals. These devices are useful in optical communications applications that use the wavelength division multiplexing technique to encode multiple signals into the same transmission medium.

The device is composed of two stacked p-i-n photodiodes, both optimized for the selective collection of photo generated carriers. Band gap engineering was used to adjust the photogeneration and recombination rates profiles of the intrinsic absorber regions of each photodiode to short and long wavelength absorption and carrier collection in the visible spectrum. The generated photocurrent signal using different input optical channels was analyzed at reverse and forward bias and under steady state illumination. A demux algorithm based on the voltage controlled sensitivity of the device was proposed and tested. An electrical model of the WDM device is presented and supported by the solution of the respective circuit equations. Other possible applications of the device in optical communication systems are also proposed.

Keywords

optoelectronicdevicessemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1245: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2010 , 2010 , 1245-A18-05
Copyright
Copyright © Materials Research Society 2010

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References

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