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Demonstration of Hybrid Silicon-on-Silicon Carbide Wafers and Electrical Test Structures with Improved Thermal Performance

  • Steven G. Whipple (a1), John T. Torvik (a2), Randolph E. Treece (a3) and Jeffrey T. Bernacki (a4)

Abstract

Multiple 50 mm hybrid Si-on-SiC substrates consisting of thin film [100] Si (1 μm) on bulk semi-insulating [0001] 6H-SiC wafers were fabricated using low-temperature (150°C) wafer bonding and slicing techniques. A set of samples were prepared comparing various thicknesses of SiO2 (60, 120, 190, 240 and 520 nm) as an intermediate bonding layer between the two materials. A variety of test structures such as Van der Pauw structures, linear transfer-length measurement arrays and resistors were fabricated in the Si layers using standard Si processing (such as lithography, B-diffusion, etching and oxidation) in order to characterize the robustness as well as the electrical and thermal properties of the hybrid substrates. Bulk Si and Si-on-insulator (SOI) substrates were used for comparison. We report the Si layers on the hybrid Si-on-SiC substrates to be device-grade in terms of mobility and crystal structure, and that their device-to-device electrical isolation properties are superior to those of bulk Si and comparable to those of SOI. Furthermore, electrical test structures on hybrid Si-on-SiC substrates exhibit vastly superior heat dissipation compared to equivalent devices on bulk Si or SOI. Specifically, the temperature rise can be as much as 102°C lower in resistor devices made on Si-on-SiC (Tj= 191°C) compared to on bulk Si (Tj= 293C) under high-power density operation (67 kW/cm2). We also describe the effects of intermediate oxide thickness on thermal resistance.

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1 Choyke, W.J and Devaty, R.P, Naval Research Reviews, 51, 212 (1999)
2 http://www.cree.com/products/index.htm
3 http://www.infineon.com/cgi-bin/ifx/portal/ep/home.do?tabId=0
4 Michnowski, R. and Wojtasiak, W., IEEE Proceedings of the 14th International Conference on Microwaves, Radar and Wireless Communications, 1, 8992 (2002)
5 Pinel, S., Tasselli, J., Bailbe, J.P., Marty, A, Puech, P., and Esteve, D., IEEE Proceedings of the 22nd International Conference on Microelectronics, 2, 443446 (2000)
6 Kizilyalli, I.C, Safar, H., Herbsommer, J., Burden, S.J., Gammel, P.L., IEEE Electron Device Letters, 26, 404406 (2005).
7 Desmond-Colinge, C.A. and Gösele, U., MRS Bulletin, 23, 3034 (1998).
8 http://www.intrinsicsemi.com/
9 http://www.novasic.com/
10 Bruel, M., Electon. Lett., 31, 1201 (1995). SmartCut is a registered trademark of SOITEC, Parc Technologique des Fontaines, 38190 Bernin, France.
11 Jaeger, R.C., Introduction to Microelectronic Fabrication, (Addison-Wesley, Reading Mass. 1988) p4987.

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