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Degree of Crystallinity and Strain in B4C and SiC Thin Films as a Function of Processing Conditions

  • J. Hershberger (a1), Z. U. Rek (a2), F. Kustas (a3), S. M. Yalisove (a4) and J. C. Bilello (a4)...

Abstract

Amorphous and crystalline content in sputtered B4C and SiC thin films has been analyzed by synchrotron grazing incidence x-ray scattering (GIXS). GIXS provided quantitative information on the average structure while TEM was used to find inhomogeneities such as small volume fraction phases. GIXS results were compared to simulations to determine average particle size or bond length for crystalline or amorphous phases respectively. In this work, we compared results from films deposited with, and without, an RF bias applied to the substrate during deposition. Results indicated that SiC can be described as strained polycrystalline material with particle size of approximately 13 Å for biased samples and 9Å for unbiased samples. Boron carbide deposited without bias was completely crystalline with a particle size of approximately 30 Å, while the data suggested that B4C deposited with bias is amorphous. The scattering from the biased materials was Fourier transformed to yield radial distribution functions (RDF). This provided nearest neighbor distances, and it was demonstrated that the technique can be used to determine full three-dimensional strain tensors in amorphous thin films.

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Degree of Crystallinity and Strain in B4C and SiC Thin Films as a Function of Processing Conditions

  • J. Hershberger (a1), Z. U. Rek (a2), F. Kustas (a3), S. M. Yalisove (a4) and J. C. Bilello (a4)...

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