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Degradation of Single-Quantum Well InGaN Green Light Emitting Diodes Under High Electrical Stress

  • Marek Osiński (a1), Piotr Perlin (a1), Ptr G Eliseev (a1), Gungtan Liu (a1) and Daniel L Barton (a2)...

Abstract

We performed a degradation study of high-brightness Nichia single-quantum well AlGaN/InGaN/GaN green light-emitting diodes (LEDs). The devices were subjected to high current electrical stress with current pulse amplitudes between 1 A and 7 A and voltages between 10 V and 70 V with a pulse length of 100 ns and a repetition rate of 1 kHz. The study showed that when the current amplitude was increased to the 6 A - 7.5 A range, a fast (about 1 s) degradation occurred, with a visible discharge between the p and n-type electrodes. Subsequent failure analysis revealed severe damage to metal contacts which lead to the formation of shorts in the surface plane of diode. For currents smaller than 6 A, a slow degradation was observed as a decrease in optical power and an increase in the reverse current leakage. After between 24 and 100 hours however, a rapid degradation occurred which was similar to the rapid degradation observed at higher currents. Failure analysis results suggest that carbonization of the plastic encapsulation material on the diode surface leads to the discharge which destroys the diode.

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References

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Degradation of Single-Quantum Well InGaN Green Light Emitting Diodes Under High Electrical Stress

  • Marek Osiński (a1), Piotr Perlin (a1), Ptr G Eliseev (a1), Gungtan Liu (a1) and Daniel L Barton (a2)...

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