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Degradation of High and Low Voltage Amorphous Silicon Thin Film Transistors Due to Air Leak

Published online by Cambridge University Press:  25 February 2011

Russel A. Martin  and
C. C. Tsai
Russel A. Martin
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
C. C. Tsai
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
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Abstract

Amorphous Silicon TFT performance is shown to be strongly affected by an air leak into a plasma deposition system during film growth. The introduction of a controlled air leak into the system raises the oxygen content of the active layer. For both high and low voltage transistors (HVTFT & LVTFT) the drive current, FET mobility, and threshold voltage are degraded with increasing leak rate. Moreover, the stability of HVTFTs containing a space charge limited region is adversely affected by increasing leak rate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 277
Copyright
Copyright © Materials Research Society 1989

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References

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