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Degradation of High and Low Voltage Amorphous Silicon Thin Film Transistors Due to Air Leak
Published online by Cambridge University Press: 25 February 2011
Abstract
Amorphous Silicon TFT performance is shown to be strongly affected by an air leak into a plasma deposition system during film growth. The introduction of a controlled air leak into the system raises the oxygen content of the active layer. For both high and low voltage transistors (HVTFT & LVTFT) the drive current, FET mobility, and threshold voltage are degraded with increasing leak rate. Moreover, the stability of HVTFTs containing a space charge limited region is adversely affected by increasing leak rate.
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- Copyright © Materials Research Society 1989
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