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Degradation and Recovery of Si1−xGex Devices by Irradiation

  • H. Ohyama (a1), J. Vanhellemont (a2), Y. Takami (a3), K. Hayama (a1), T. Kudo (a1), T. Hakata (a1), K. Kobayashi (a4), H. Sunaga (a5), I. Hironaka (a6), J. Poortmans (a2) and M. Caymax (a2)...

Abstract

Results are presented of a study on the degradation and recovery behavior of strained Si 1−xGex diodes and heterojunction bipolar transistors (HBTs) by electron and neutron irradiation. The degradation of device performance and the generation of lattice defects are reported as a function of germanium content and radiation source. Isochronal annealing is performed to study the recovery behavior of the irradiated devices. The radiation source dependence of the degradation is discussed taking into account the absorbed energy dunng irradiation.

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1. Ohyama, H., Vanhellemont, H. Sunaga, Poortmans, J., Caymax, M. and Clauws, P., IEEE Trans. Nucl. Sci., 41, 487 (1994).
2. Ohyama, H., Vanhellemont, Y. Takami, Hayama, K., Sunaga, H., Poortmans, J., Caymax, M. and Clauws, P., IEEE Trans. Nucl. Sci., 41, 2437 (1994).
3. Ohyama, H., Vanhellemont, Y. Takami, Hayama, K., Sunaga, H., Poortmans, J. and Caymax, M., accepted for presentation at the 32nd Annual international Nuclear and Space Radiation Effects Conference, NSREC '95, Madison USA, July 17-21, 1995.

Degradation and Recovery of Si1−xGex Devices by Irradiation

  • H. Ohyama (a1), J. Vanhellemont (a2), Y. Takami (a3), K. Hayama (a1), T. Kudo (a1), T. Hakata (a1), K. Kobayashi (a4), H. Sunaga (a5), I. Hironaka (a6), J. Poortmans (a2) and M. Caymax (a2)...

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