Hostname: page-component-848d4c4894-8kt4b Total loading time: 0 Render date: 2024-06-20T19:20:39.277Z Has data issue: false hasContentIssue false
  • English
  • Français

Defect-Selective Etching of Icosahedral Boron Arsenide (B12As2) Crystals in Molten Potassium Hydroxide

Published online by Cambridge University Press:  14 March 2011

C.E. Whiteley ,
A. Mayo ,
J.H. Edgar ,
M. Dudley  and
Y. Zhang
C.E. Whiteley
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan KS, 66506.
A. Mayo
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan KS, 66506.
J.H. Edgar
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan KS, 66506.
M. Dudley
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook, NY, 11794.
Y. Zhang
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook, NY, 11794.
Get access

Abstract

The present work reports on the defect-selective etching (DSE) for estimating dislocation densities in icosahedral boron arsenide (B12As2) crystals using molten potassium hydroxide (KOH). DSE takes advantage of the greater reactivity of high-energy sites surrounding a dislocation, compared to the surrounding dislocation-free regions. The etch pits per area are indicative of the defect densities in the crystals, as confirmed by x-ray topography (XRT). Etch pit densities were determined for icosahedral boron arsenide crystals produced from a molten nickel flux as a function of etch time (1-5 minutes) and temperature (400-700°C). The etch pits were predominately triangle shaped, and ranged in size from 5-25μm. The average etch pit density of the triangle and oval etch-pits was on the order of 5x107cm-2 and 3x106cm-2 (respectively), for crystals that were etched for two minutes at 550°C.

Keywords

Bdefectsdislocations
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1307: Symposium CC – Boron and Boron Compounds—From Fundamentals to Applications , 2011 , mrsf10-1307-cc05-18
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Tsolfanidis, N., “Measurement and Detection of Radiation”, 2nd Ed.; Taylor & Francis: Bristol, 1995 Google Scholar
[2] Gerhard, L., “Semiconductor Radiation Detectors”, 1st Ed.; Springer: New York, 2007 Google Scholar
[3] Xu, Z., Edgar, J. H., Speakman, S., J. Cryst. Growth 293 (2006) 162–168.Google Scholar
[4] Ashbee, K.H.G., and Dubose, C.K.H., Acta Meta. 90 (1972)241–245 Google Scholar
[5] Zhuang, D., Edgar, J.H., Mater. Sci. Eng. Rev., 48 (2005) 1–46 Google Scholar
[6] Callister, W., and Rethwisch, D., “Fundamentals of Materials Science and Engineering: an Integrated Approach.” John Wiley and Sons, 2007 Google Scholar
[7] Bennet, A., “Crystals Perfect and Imperfect.” Walker and Company, 1965.Google Scholar
[8] Chen, H., Dissertation, Stony Brock University (2008)Google Scholar
[9] Zhuang, D., Dissertation, Kansas State University, 2004 Google Scholar
[10] Weyher, J.L., Albrecht, M., Wosinski, T., Nowak, G., Strunk, H.P., Porowski, S., Mat. Sci.. and Eng. B80 (2001) 318–321 Google Scholar
[11] Weyher, J.L., Macht, L., Kamler, G., Borysiuk, J., and Grzegory, I., Phys. Stat. Sol. C 0 (2003) 821–826 Google Scholar
[12] Zhuang, D., Edgar, J.H., Strojek, B., Chaudhuri, J., and Rek, Z., J. Cryst. Growth. 262 (2004) 89–94 Google Scholar
[13] Weyher, J.L., Lazar, S., Borysiuk, J., and Pernot, J., Phys. Stat. Sol. (a) No. 4, (2005) 578–583 Google Scholar
[14] Gu, Z., Edgar, J.H., Coffey, D.W., Chaudhuri, J., Nyakiti, L., Lee, R.G., and Wen, J.G., J. Cryst. Growth, 293 (2006) 242–246 Google Scholar
[15] Bickermann, M., Schmidt, S., Epelbaum, B.M., Heimann, P., Nagata, S., and Winnacker, A., J. Cryst. Growth 300 (2007) 299–307.Google Scholar
[16] Albrecht, M., Weyher, J.L., Lucznik, B., Grzegory, I., and Porowski, S., Appl. Phys. Lett., 92 (2008) 231909 Google Scholar
[17] Nyakiti, L. O., Chaudhuri, J., Kenik, E. A., Lu, P., Edgar, J. H., and Li, P., Mater. Res. Soc. Symp. Proc., 1040 (2008) 1069-D08-03Google Scholar
[18] Zhang, Y., Edgar, J.H., Plummer, J., Whiteley, C.E., Chen, H., Zhang, Y., Dudley, M., Gong, Y., Gray, J., and Kuball, M., Materials Research Society Symposium Proceedings, Vol. 1164 (2009)Google Scholar
[19] Whiteley, C.E., Mayo, A., Edgar, J.H., Kuball, M., and Zhang, Y., J. Cryst. Growth in press.Google Scholar