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Defects in Superlattices Under Pressure

  • Run-Di Hong (a1), David W. Jenkins (a1), S. Y. Ren (a1) and John D. Dow (a1)

Abstract

We report theoretical calculations of deep levels in GaAs/AlxGa1−xAs superlattices under hydrostatic pressure. We predict phase diagrams for DX centers: for a given composition x there is a function p(a), which relates pressure p and GaAs quantum-well width a, and defines a phase boundary between two regions: one in which DX is a deep trap in the fundamental band gap and another in which the DX deep level lies in the conduction band.

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[1] Ren, S. Y., Dow, J. D., and Shen, J., “Deep impurity levels in semiconductor superlattices,” to be published.
[2] Hjalmarson, H. P., Vogl, P., Dow, J. D., and Wolford, D. J., Phys. Rev. Lett. 44, 810 (1980).
[3] Chadi, D. J. and Cohen, M. L., Phys. Rev. B8, 5747 (1973).
[4] Ren, S. Y., Dow, J. D., and Wolford, D. J., Phys. Rev. B25, 7661 (1982).
[5] Wolford, D. J., Kuech, T. F., Bradley, J. A., Gell, M. A., Ninno, D., and Jaros, M., J. Vac. Sci. Technol. B4, 1043 (1986).
[6] Lang, D. V. and Logan, R. A., Phys. Rev. Lett. 39, 635 (1977).
[7] Hjalmarson, H. P., private communication. See also Ref.[2].
[8] Mizuta, M., Tachikawa, M., Kukimoto, H., and Minomura, S., Jpn. J. Appl. Phys. 24, L1431 (1985).
[9] Hjalmarson, H. P. and Drummond, T. J., Appl. Phys. Lett. 48, 656 (1986).
[10] See also Li, M. F. and Yu, P., Solid State Commun. 61, 13 (1987) for an opposing viewpoint.
[11] Vogl, P., Hjalmarson, H. P., and Dow, J. D., J. Phys. Chem. Solids 44, 365 (1983).
[12] In the virtual crystal approximation, the diagonal matrix elements of AlAs and GaAs are averaged, with weights x and 1−x, and the off-diagonal matrix elements times the square of the bond length are also averaged. See, for example, Ref.[2].
[13] Yamaguchi, E., Jpn. J. Appl. Phys. 25, L643 (1986).
[14] The critical pressure pc for GaAs is approximately 25 kbar.

Defects in Superlattices Under Pressure

  • Run-Di Hong (a1), David W. Jenkins (a1), S. Y. Ren (a1) and John D. Dow (a1)

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