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DEFECTS IN MBE SILICON

  • R.M. CHRENKO (a1), L.J. SCHOWALTER (a1), E.L. HALL (a1) and N. LEWIS (a1)

Abstract

A study of defects that are observed in Si MBE layers under certain growth conditions is reported. Optical microscopy examinations of unetched and etched layers reveal particle-like defects of micron size, stacking faults, dislocations, and saucer pits. TEM shows interfacial defects of tens of Angstroms size at the substrate-epitaxial layer interface. Reproducible defect densities are given for various in-situ cleaning procedures.

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