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Defects In Low Temperature Mbe-Grown Si And Sige/Si Structures

Published online by Cambridge University Press:  15 February 2011

W. M. Chen ,
I. A. Buyanova  and
B. Monemar
W. M. Chen
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN, wmc@ifm.liu.se
I. A. Buyanova
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN, wmc@ifm.liu.se
B. Monemar
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN, wmc@ifm.liu.se
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Abstract

We review our recent experimental results on important grown-in non-radiative defects in Si and SiGe/Si heterostructures grown by molecular beam epitaxy (MBE) at low temperature. Several types of such defects have been revealed by the optically detected magnetic resonance technique and were shown to play an important role in carrier recombination. Among them a dominant defect is identified to be the vacancy-oxygen (V-O) complex. Experimental evidence on the formation mechanisms of these non-radiative defects points at a low surface adatom mobility during low temperature growth as a major cause, and also ion bombardment as occurs e.g. during potential enhanced doping. Based on the gained knowledge, educated attempts by post-growth hydrogen and thermal treatments have been made to remove these harmful defects and to improve the radiative efficiency of the material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 355
Copyright
Copyright © Materials Research Society 1997

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