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Defects in GaAs as Revealed by Chemical Etching

  • H. Lessoff (a1) and W. Tseng (a1)

Abstract

A new eutectic etchant for GaAs has been developed to display (a) the normal etch pit patterns, but also to reveal (b) rectangular, (c) shallow matrix and (d) raised geometric patterns. Results on various GaAs substrates, ranged from undoped to In-, Cr-, Te-, Si-doped materials, show a general trend: The materials having the numbers of (a), (b) and (c) etched patterns are roughly in the above order (from high density to low density). Whereas, for the density of the raised geometric patterns, the ranking is reversed. It is concluded that the major factor in developing the (a), (b) and (c) etched patterns is due to the stress, while the (d) pattern may be due to dopant and its influence on Ga to As bondings.

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[1] Grabmaier, J. G. and Watson, C. B., Phys. Status Solidi, 32 K13 (1969).
[2] Lessoff, H. and Gorman, R., J. Electronic Materials, 13 733 (1984).
[3] Tseng, W. F., Lessoff, H. and Gorman, R., J. Electroch-ei. Soc., in press.

Defects in GaAs as Revealed by Chemical Etching

  • H. Lessoff (a1) and W. Tseng (a1)

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