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Defects In Erbium/Oxygen Implanted Silicon

Published online by Cambridge University Press:  15 February 2011

X. Duan ,
J. Palm ,
B. Zheng ,
M. Morse ,
J. Michel  and
L. C. Kimerling
X. Duan
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology 77 Massachusetts Avenue, Cambridge, MA 02139
J. Palm
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology 77 Massachusetts Avenue, Cambridge, MA 02139
B. Zheng
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology 77 Massachusetts Avenue, Cambridge, MA 02139
M. Morse
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology 77 Massachusetts Avenue, Cambridge, MA 02139
J. Michel
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology 77 Massachusetts Avenue, Cambridge, MA 02139
L. C. Kimerling
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology 77 Massachusetts Avenue, Cambridge, MA 02139
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Abstract

A systematic study of defects in the Er/O implanted silicon was conducted using TEM, HRTEM and SIMS. Defect-free material was obtained after the annealing of 400 keV Er+ implanted (100)Si. In sharp contrast, several forms of secondary defects consisting of dislocations, dislocation loops and precipitates were induced upon annealing at different temperatures in the 4.5 MeV implanted (100)Si sample. The isothermal evolution of the defects and reactions between dopants and defects were studied. Oxygen tends to segregate into the dislocation loop zones, where platelet precipitates with habit planes of {111} were found. Following dissociation of oxygen and erbium, plate-like Er precipitates were generated, which are most likely ErSi2 with a habit plane of {111}

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 249
Copyright
Copyright © Materials Research Society 1997

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