Skip to main content Accessibility help
×
×
Home

Defect-Minimized SiGe Layer Using Ion Beam Synthesis

  • Seongil Im (a1), Jack Washbum (a1), Ronald Gronsky (a1), Nathan W. Cheung (a2) and Kin Man Yu (a3)...

Abstract

Ion Beam Synthesis for SiGe layers was performed to study the end-of-range(EOR) defects and strain-induced dislocations. High Ge doses of 5×1016/cm2, 3×1016/cm2 and 2×1016/cm2 at 120 keV were implanted to obtain 12 at%, 7 at% and 5 at% of Ge peak concentrations respectively. RBS spectra show a projected range(Rp) at a depth of 65nm and an amorphous thickness of 170nm on a wafer with 12 at% of Ge peak concentration. Ge ion implantation was performed both at room temperature(RT) and at liquid nitrogen temperature(LNT), in order to investigate the effect of implantation temperature on reducing EOR defect density. Solid phase epitaxial(SPE) annealing for all SiGe layers was done in nitrogen ambient at 800°C. The EOR defect density is considerably reduced by LNT implantation and the strain-induced dislocations have a threshold Ge peak concentration(about 6 at%) for their abrupt generation. For SiGe layer with 12 at% Ge peak concentration, the amorphous-crystalline(a/c) interfacial morphology changes from a planar interface into a faceted interface during SPE growth at 550°C.

Copyright

References

Hide All
1. Z-Matutinovic-Krstelj, , Prinz, E. J., Schwartz, P. V., Sturm, J.C., IEEE Electronic Device Lett., 12(4), 163 (1991)
2. Patton, G. L., Iyer, S. S., Delage, S. L., Tiwari, S., Stork, J. M. C., IEEE Electronic Device Lett., 9(4), 165 (1988)
3. Patton, G. L., Comfort, J. H., Meyerson, B. S., Crabbe, E. F., Scilla, G. J., De Fresan, E., Stork, J. C., Sun, J.Y.-C., IEEE Electronic Device Lett., 11(4), 171 (1990)
4. Fukami, Akira, Shoji, Ken-ichi, Nagano, Takahiro, Yang, Cary Y., Appl Phys. Lett. 5 (22), 2345 (1990)
5. Fukami, Akira, Shoji, Ken-ichi, Nagano, Takahiro, Yang, Cary Y., Microelectronic Engineering 15, 15 (1991)
6. Prussin, S., Jones, K. S., J. Electrochem. Soc., 137, (6), 1912 (1990)
7. Jones, K. S., Venables, D., J. Appl Phys. 69(5), 2931 (1991)
8. Ganin, E. and Marwick, A., Mat. Res. Soc. Symp. Proc., 147, 13 (1989)
9. Paine, D.C., Howard, D.J., Stoffel, N.G., J. Electronic Materials, 20, (10), 735 (1991)
10. Paine, D.C., Howard, D.J., Horton, J.A., J. Mater. Res., 5, 1023(1990)
11. Williams, J.S., Ridgway, M.C., Elliman, R.G., Davies, J.A., Johnson, S.T., Palmer, G.R., Nucl. Inst. Meth. in Phys. Res. B (55), 602 (1991)
12. Mazzone, A.M., Phys. Stat. Sol., 95, (a), 149 (1986)
13. Paine, D.C., Howard, D.J., Stoffel, N.G., Mat. Res. Soc. Symp. Proc, 187, 279(1990)
14. Drosd, R., Washburn, J., J. Appl Phys., 53(1), 397 (1982)
15. Csepregi, L., Mayer, J., Sigmon, T., Appl Phys. Lett., 29, 92(1976)
Recommend this journal

Email your librarian or administrator to recommend adding this journal to your organisation's collection.

MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
Please enter your name
Please enter a valid email address
Who would you like to send this to? *
×

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed