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Defect-Minimized SiGe Layer Using Ion Beam Synthesis

Published online by Cambridge University Press:  25 February 2011

Seongil Im ,
Jack Washbum ,
Ronald Gronsky ,
Nathan W. Cheung  and
Kin Man Yu
Seongil Im
Affiliation:
Materials Science and Engineering, University of California, Berkeley, CA 94720
Jack Washbum
Affiliation:
Materials Science and Engineering, University of California, Berkeley, CA 94720
Ronald Gronsky
Affiliation:
Materials Science and Engineering, University of California, Berkeley, CA 94720
Nathan W. Cheung
Affiliation:
Electronics Research Laboratory, University of California, Berkeley, CA 94720
Kin Man Yu
Affiliation:
Materials Sciences Division, Lawrence Berkeley Laboratory, 1 Cyclotron Road, Berkeley, CA 94720
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Abstract

Ion Beam Synthesis for SiGe layers was performed to study the end-of-range(EOR) defects and strain-induced dislocations. High Ge doses of 5×1016/cm2, 3×1016/cm2 and 2×1016/cm2 at 120 keV were implanted to obtain 12 at%, 7 at% and 5 at% of Ge peak concentrations respectively. RBS spectra show a projected range(Rp) at a depth of 65nm and an amorphous thickness of 170nm on a wafer with 12 at% of Ge peak concentration. Ge ion implantation was performed both at room temperature(RT) and at liquid nitrogen temperature(LNT), in order to investigate the effect of implantation temperature on reducing EOR defect density. Solid phase epitaxial(SPE) annealing for all SiGe layers was done in nitrogen ambient at 800°C. The EOR defect density is considerably reduced by LNT implantation and the strain-induced dislocations have a threshold Ge peak concentration(about 6 at%) for their abrupt generation. For SiGe layer with 12 at% Ge peak concentration, the amorphous-crystalline(a/c) interfacial morphology changes from a planar interface into a faceted interface during SPE growth at 550°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 249
Copyright
Copyright © Materials Research Society 1993

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References

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