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Defect-Induced Photoluminescence from Pulsed Laser Annealed Si
Published online by Cambridge University Press: 15 February 2011
Abstract
Low temperature photoluminescence is used to study damage centers in ion implanted, pulsed laser annealed Si. A number of intense, damage related photoluminescence lines W, G and 13 are observed. It is shown that most of the W (and 13) centers are created by solid phase annealing of implant damage beyond the laser melted region. Peak G, on the other hand, is present in the tail of the implant damage before laser annealing.
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- Copyright © Materials Research Society 1981
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