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Defect-Free Coalescence of Silicon Layers Over SiO2

  • F. Banhart (a1), N. Nagel (a2), F. Phillipp (a1) and E. Bauser (a2)

Abstract

Defect-free coalescence of Si layers which grow laterally over partially oxidized Si substrates is achieved in liquid phase epitaxy from indium solution. An adequate design of the oxide pattern on (111) substrates ascertains that the growth fronts of the Si layers merge gradually on the SiO2 and avoids the formation of inclusions or crystallographic defects. Electron Microscopy in diffraction contrast and convergent beam electron diffraction reveal that the epitaxial Si layers bend towards the substrate as they grow laterally over the SiO2 film. The layers straighten out again as they merge and form a perfect seam of coalescence.

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Defect-Free Coalescence of Silicon Layers Over SiO2

  • F. Banhart (a1), N. Nagel (a2), F. Phillipp (a1) and E. Bauser (a2)

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