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Defect-Engineered Graded GexSi1-x Buffers on Si (001) with Extreme Low Threading Dislocation Density

Published online by Cambridge University Press:  26 February 2011

G. Kissinger ,
T. Morgenstern ,
G. Morgenstern ,
H. B. Erzgräber  and
H. Richter
G. Kissinger
Affiliation:
Institut fur Halbleiterphysik Frankfurt (Oder) GmbH, Walter-Korsing-Str.2, D-15230 Frankfurt (Oder), Germany
T. Morgenstern
Affiliation:
Institut fur Halbleiterphysik Frankfurt (Oder) GmbH, Walter-Korsing-Str.2, D-15230 Frankfurt (Oder), Germany
G. Morgenstern
Affiliation:
Institut fur Halbleiterphysik Frankfurt (Oder) GmbH, Walter-Korsing-Str.2, D-15230 Frankfurt (Oder), Germany
H. B. Erzgräber
Affiliation:
Institut fur Halbleiterphysik Frankfurt (Oder) GmbH, Walter-Korsing-Str.2, D-15230 Frankfurt (Oder), Germany
H. Richter
Affiliation:
Institut fur Halbleiterphysik Frankfurt (Oder) GmbH, Walter-Korsing-Str.2, D-15230 Frankfurt (Oder), Germany
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Abstract

Stepwise equilibrated graded GexSii-x (x≤0.2) buffers with threading dislocation densities between 102 and 103 cm−2 on the whole area of 4 inch silicon wafers were grown and studied by transmission electron microscopy, defect etching, atomic force microscopy and photoluminescence spectroscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 141
Copyright
Copyright © Materials Research Society 1995

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