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Defect Studies of GaN under Large Hydrostatic Pressure

Published online by Cambridge University Press:  21 February 2011

C. Wetzel ,
S. Fischer ,
W. Walukiewicz ,
J. Ager III ,
E.E. Haller ,
I. Grzegory ,
S. Porowski  and
T. Suski
C. Wetzel
Affiliation:
Lawrence Berkeley National Laboratory and University of California, Berkeley, CA 94720, USA
S. Fischer
Affiliation:
Lawrence Berkeley National Laboratory and University of California, Berkeley, CA 94720, USA
W. Walukiewicz
Affiliation:
Lawrence Berkeley National Laboratory and University of California, Berkeley, CA 94720, USA
J. Ager III
Affiliation:
Lawrence Berkeley National Laboratory and University of California, Berkeley, CA 94720, USA
E.E. Haller
Affiliation:
Lawrence Berkeley National Laboratory and University of California, Berkeley, CA 94720, USA
I. Grzegory
Affiliation:
Unipress, Polish Academy of Sciences, Warszawa, Poland
S. Porowski
Affiliation:
Unipress, Polish Academy of Sciences, Warszawa, Poland
T. Suski
Affiliation:
Lawrence Berkeley National Laboratory and University of California, Berkeley, CA 94720, USA
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Abstract

GaN plays a key role in the exploration of the properties of group-Ill nitrides. As grown GaN often shows a high electron concentration, e.g. 1019 cm−3, of as yet unidentified origin. Applying large hydrostatic pressure we studied the behavior of these donors and a frequently observed strong luminescence band at 3.42 eV. We find a drop of the electron concentration to 3×1017 cm−3 at 27 GPa and derive a binding energy of 126 meV for the neutral singlet donor level at this pressure. Such a pressure behavior of a donor is consistent with the model of strongly localized defects. Within the framework of a bandstructure calculation we predict the neutral level of this donor at 0.40 ± 0.10 eV above the conduction band edge at ambient pressure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 417
Copyright
Copyright © Materials Research Society 1996

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References

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