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Defect Structure at Buried Silicon Nitride Layers

  • E.H. Te Kaat (a1) and J. Belz (a1)

Abstract

Buried insulating silicon nitride layers are formed by a 400°C N+-implantation at 150 keV with fluences from 0.35 to 1×1018 N+/cm2 and subsequent anneal at 1200°C in dry nitrogen. TEM and AES measurements on bevelled samples yield a correlation of ion and damage profiles to local defect structures. Low dose implantation results in polycrystalline precipitates of scaled spherulitic structure. High dose continuous polycrystalline nitride layers have good insulation properties following a 5 hour anneal. During anneal, the common asymmetrical ion depth profile transforms to a nearly rectangular profile. The silicon surface layer contains 106 to 108 dislocations/cm2, which seem to be passivated, since detrimental effects on electronic devices have not been measured.

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1. Akasaka, Y., Cullen, G.W., Gibbons, J.F., Hill, C. and Vail, P.J., in “Energy Beam-Solid Interactions and Transient Thermal Processing”, North Holland, New York (1984)
2. Tokuyama, T., in “Ion Implantation: Equipment and Techniques”, Ed. Ryssel, H. and Glawisching, H.; Springer Verlag Berlin (1983)
3. Schmidt, M., Diploma Thesis, University of Dortmund, FRG, (1984)
4. Edelman, F.L. et.al., phys. stat. sol. (a) 50, 573 (1978)
5. Schmidt, M., Kaat, E. te, Bubert, H. and Garten, R.P.H., Fresenius Z. Anal. Chem. 319, 616 (1984)
6. Zimmer, G. and Vogt, H.; 2nd International Workshop on Future Electron Devices - SOI Technology and 3D-Integration -; Shuzenji, March19-21,(1985)
7. Vogt, H., Zimmer, G., Belz, J., Heidemann, K. and Kaat, E. te, Semiconductor Interface Specialists Conf., Fort Lauderdale (USA), Dec. (1983)

Defect Structure at Buried Silicon Nitride Layers

  • E.H. Te Kaat (a1) and J. Belz (a1)

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