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Defect States in Hydrogenated Amorphous Silicon-Sulphur Alloys by ESR and PAS

Published online by Cambridge University Press:  21 February 2011

Gaorong Han ,
Jianmin Qiao ,
Piyi Du ,
Zhonghua Jiang  and
Zishang Ding
Gaorong Han
Affiliation:
Dept. of Materials Science and Engineering, Zhejiang University, Hangzhou, China
Jianmin Qiao
Affiliation:
Dept. of Materials Science and Engineering, Zhejiang University, Hangzhou, China
Piyi Du
Affiliation:
Dept. of Materials Science and Engineering, Zhejiang University, Hangzhou, China
Zhonghua Jiang
Affiliation:
Dept. of Materials Science and Engineering, Zhejiang University, Hangzhou, China
Zishang Ding
Affiliation:
Dept. of Materials Science and Engineering, Zhejiang University, Hangzhou, China
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Abstract

We have presented ESR and PAS measurements for a series of a-SiS:H and a-Si: H films deposited by glow discharge at different parameters. The spin density in a-SiS:H alloys measured by ESR is essentially independent of the sulphur content, while the density of defects measured by PAS increases significantly with the increasing of sulphur content. The ESR signals in a-SiS:H alloys strongly depend on both annealing and illumination. The spin density increases up to 540°C and then decreases with raising annealing temperature for a-SiS:H and a-Si:H alloys. The results suggest that some new defects such as molecular hydrogen and microvoids are appeared when addition of sulphur to a-Si:H films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 593
Copyright
Copyright © Materials Research Society 1991

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References

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