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DEFECT SELECTIVE ETCHING OF THICK AlN LAYERS GROWN ON 6H-SIC SEEDS – A TRANSMISSION ELECTRON MICROSCOPY STUDY

Published online by Cambridge University Press:  01 February 2011

Luke Owuor Nyakiti ,
Jharna Chaudhuri ,
Ed A Kenik ,
Peng Lu  and
James H Edgar
Luke Owuor Nyakiti
Affiliation:
luke.nyakiti@ttu.edu, Texas Tech University, Department of Mechanical Engineering, 7th Street & Boston, Lubbock, TX, 79409-1021, United States
Jharna Chaudhuri
Affiliation:
jharna.chaudhuri@ttu.edu, Texas Tech University, Mechanical Engineering, 7th Street & Boston Avenue, Lubbock, TX, 79409-1021, United States
Ed A Kenik
Affiliation:
kenikea@ornl.gov, Oak Ridge National Laboratory, 1 Bethel Valley Road, Oak Ridge, TN, 37831-6064, United States
Peng Lu
Affiliation:
plu@ncsu.edu, Kansas State University, Department of Chemical Engineering, Manhattan, KS, 66506, United States
James H Edgar
Affiliation:
edgarjh@ksu.edu, Kansas State University, Department of Chemical Engineering, Manhattan, KS, 66506, United States
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Abstract

In the present study, the type and densities of defects in AlN crystals grown on 6H-SiC seeds by the sublimation-recombination method were assessed. The positions of the defects in AlN were first identified by defect selective etching (DSE) in molten NaOH-KOH at 400 °C for 2 minutes. Etching produced pits of three different sizes: 1.77 ìm, 2.35 ìm , and 2.86 ìm. The etch pits were either aligned together forming a sub-grain boundary or randomly distributed. The smaller etch pits were either isolated or associated with larger etch pits. After preparing cross-sections of the pits by the focused ion beam (FIB) technique, transmission electron microscopy (TEM) was performed to determine which dislocation type (edge, mixed or screw) produced a specific etch pit sizes. Preliminary TEM bright field and dark field study using different zone axes and diffraction vectors indicates an edge dislocation with a Burgers vector 1/3 is associated with the smallest etch pit size.

Keywords

dislocationstransmission electron microscopy (TEM)nitride
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1040: Symposium Q – Nitrides and Related Bulk Materials , 2007 , 1040-Q11-03
Copyright
Copyright © Materials Research Society 2008

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