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Defect Reduction of Cvd-Grown Cubic SiC Epitaxial Films on Off-Axis Si(100) Substrates with a Novel Off-Direction.

  • Katsuki Furukawa (a1), Yoshihisa Fujii (a1), Akira Suzuki (a1) and Shigeo Nakajima (a1)

Abstract

Monocrystalline cubic SiC (β -SiC) thin films with lower defect densities have been epitaxially grown by chemical vapor deposition on off-axis Si (100) substrates with off-directions different from the conventional 〈011〉. Stacking faults of β -SiC films are investigated by the electrolytic etching and SEM observation. The effects of off-direction deviated from 〈011〉 are examined for the first time. The off-angle is fixed at 2 degrees. We find a reduction in defect density with increasing deviation angle θ, of off-direction from [011] toward [011[ (θ = 0 - 45°). The defect density becomes one order of magnitude smaller than that of on-axis (100) substrates. A typical value of the stacking fault density is approximately 6 × 106 cm−2 on the substrate with θ = 30° (film thickness: 24μ m).

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Defect Reduction of Cvd-Grown Cubic SiC Epitaxial Films on Off-Axis Si(100) Substrates with a Novel Off-Direction.

  • Katsuki Furukawa (a1), Yoshihisa Fujii (a1), Akira Suzuki (a1) and Shigeo Nakajima (a1)

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