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Defect Pair Formation by Implantation-Induced Stresses in High-Dose Oxygen Implanted Silicon-on-Insulator Material

  • J.D. Lee (a1), J.C. Park (a1), D. Venables (a1), S.J. Krause (a1) and P. Roitman (a2)...


Defect microstructure and the near-surface strain of high-dose oxygen implanted silicon-on-insulator material (SIMOX) were investigated as a function of dose, implant temperature, and annealing temperature by transmission electron microscopy and high resolution x-ray diffraction. Dislocation half loops (DHLs) begin to form by stress assisted climb at a critical stress level due to implantation-induced damage. DHLs evolve into through-thickness defect (TTD) pairs by expansion during annealing. Both DHL and TTD-pair density increase with higher implant dose and lower implant temperature. Possible methods for defect density reduction are suggested based on the results of this study.



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1 Colinge, J.P., SOI Technology, Kluwer Press (1991).
2 Marsh, C.D., Nejim, A., Li, Y., Booker, G.R., Hemment, P.L.F., Chater, R.J. and Kilner, J.A., Nuc. Inst. Meth., B74, 197 (1993).
3 Visitserngtrakul, S., Cordts, B. and Krause, S., Mat. Res. Soc. Symp. Proc., 157, 161 (1990).
4 Park, J.C., Lee, J.D., Venables, D., Krause, S.J. and Roitman, P., Mat. Res. Soc. Symp. Proc., 229, 153 (1993).
5 Hill, D., Fraundorf, P. and Fraundorf, G., J. Appl. Phys., 63, 4933 (1988).
6 Crean, G.M., Lynch, S., Greef, R., Stoemenos, J., Rossow, U. and Richter, W., Mat. Res. Soc. Symp. Proc., 221, 139 (1992).
7 Lee, J. D., Park, J.C., Venables, D., Krause, S. and Roitman, P., Appl. Phys. Lett., 63, 3330 (1993).
8 Visitserngtrakul, S., Jung, C.O., Ravi, T.S., Cordts, B., Burke, D. and Krause, S.J., Inst. Phys. Conf. Ser., 100, 557 (1989).
9 De Veirman, A., Van Landuyt, J., Vanhellemont, J., Maes, H. and Yallup, K., Vacuum, 42, 367 (1991)
10 Stoemenos, J., Reeson, K.J., Robinson, A.K. and Hemment, P.L.F., J. Appl. Phys., 69, 793 (1991).
11 Venables, D. and Jones, K.S., Nuc. Inst. Meth., B74, 65 (1993).
12 Venables, D., Jones, K.S., Namavar, F. and Manke, J.M., Mat. Res. Soc Symp. Proc., 235, 103 (1992).
13 Narayan, J. and Jagannadham, K., J. Appl. Phys., 62, 1694 (1987).
14 Heydenreich, J., Inst. Phys. Conf. Ser., 104, 131 (1989).
15 Homma, Y., Yoshima, M. and Hayashi, T., Japan. J. Appl. Phys., 21, 890 (1982).
16 Nakashima, S. and Izumi, K., J. Mater. Res., 8, 523 (1993).


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