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Defect Generation During Epitaxial Growth of CoSi2 on Miniature Sized (100) Si Substrate and its Effect on Electrical Properties

  • Jeong Soo Byun (a1), Jeong Min Seon (a1), Jin Won Park (a1), Hyunsang Hwang (a1) and Jae Jeong Kim- (a1)...

Abstract

Self-aligned silicide (salicide) formation of epitaxial CoSi2, using a Co/Ti bilayer, on linear oxide (SiO2) patterned (100)Si substrate has been investigated. Rapid thermal annealing (RTA) at 550°C resulted in the lateral encroachment of silicide in the Si under the edge of the oxide. After RTA at 900°C, even though an epitaxial CoSi2 layer was formed on the Si substrate, defects such as lateral encroachment and voids were generated under the edge of the oxide. It was found that such defects lead to device failure due to the deterioration of the gate oxide and the shallow junction.

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[1] Lawrence, M., Dass, A., Fraser, D.B., and Wei, C.S., Appl. Phys. Lett. 58, 1308 (1991).
[2] Hsia, S.L., Tan, T.Y., Smith, P., and McGuire, G.E., J. Appl. Phys. 70, 7579 (1991).
[3] Vantomme, A., Nicolet, M.A., and Theodore, N.D., J. Appl. Phys. 75, 3882 (1994).
[4] Adams, D.P., Yalisove, S.M., and Englesham, D.J., J. Appl. Phys. 76, 5190 (1994).
[5] Murarka, S.P., Silicides for VLSI Applications, (Academic Press, N.Y., 1983).
[6] Byun, J.S., Kim, D.H., Kim, W.S., and Kim, H.J., J. Appl. Phys. 78, 1725 (1995).

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