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Defect Generation by Proton Irradiation of Semi-Insulating Lec GaAs

  • A. Castaldin (a1) (a2), A. Cavallini (a1) (a2), L. Polenta (a1) (a2), C. Canali (a1) (a3), F. Nava (a4), E. De La Puentee (a5), A. Alvarez (a5) and J. Jimenez (a5)...


High energy and high fluence proton irradiated semi-insulating GaAs has been studied by EBIC, PL mapping, C-V, NTSC, PICTS and p-DLTS. The main defects generated by the irradiation were analyzed. An EL2-like defect was found to be dominant. The generation of this defect annihilates the typical cellular distribution of EL2 in as-grown material. The generated EL2 defects present a different photoquenching behavior than the as-grown EL2 defects.



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