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Defect Formation by Ion Implantation in Cz-Si Studied by a Monoenergetic Positron Beam

Published online by Cambridge University Press:  26 February 2011

A. Uedono ,
Y. Ujihira ,
L. Wei ,
Y. Tabuki ,
S. Tanigawa ,
J. Sugiura ,
M. Ogasawara  and
M. Tamura
A. Uedono
Affiliation:
Department of Industrial Chemistry, Faculty of Engineering, University of Tokyo, 7–3–1 Hongo, Bunkyo-ku, Tokyo 113, Japan
Y. Ujihira
Affiliation:
Department of Industrial Chemistry, Faculty of Engineering, University of Tokyo, 7–3–1 Hongo, Bunkyo-ku, Tokyo 113, Japan
L. Wei
Affiliation:
Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
Y. Tabuki
Affiliation:
Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
S. Tanigawa
Affiliation:
Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
J. Sugiura
Affiliation:
Device Development Center, Hitachi Ltd. 2326, Imai, Ome-shi, Tokyo 198, Japan
M. Ogasawara
Affiliation:
Device Development Center, Hitachi Ltd. 2326, Imai, Ome-shi, Tokyo 198, Japan
M. Tamura
Affiliation:
Central Research Laboratory, Hitachi Ltd. 1–280, Kokubunji 185, Japan
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Abstract

Vacancy-type defects in ion implanted Si were studied by a monoenergetic positron beam. The depth-distributions of the defects were obtained from measurements of Doppler broadening profiles of the positron annihilation as a function of incident positron energy. The results showed that a size of vacany-clusters introduced by 150-keV P+-ion implantation was found to be smaller than that introduced by 2-MeV P+-ion implantation. This was attributed to an overlap of collision cascades in low-energy (150 keV) ion implanted specimens. From isochronal annealing experiments for 80-keV B+- and 150-keV P+-ion implanted specimens, the defected region was removed by 1200 °C annealing, however, for 2-MeV P+-implanted specimen, two-types of oxygen-vacancy complexes were found to coexist even after 1200 °C annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 1061
Copyright
Copyright © Materials Research Society 1992

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References

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